EEL4414/5415 Midterm Review Topics: Introduction: - overview of memory technologies FET based Memory Technology • Flash Memory - MOSFET Basics, the Threshold Voltage - NAND and NOR Flash - Reliability • SRAM • DRAM Materials covered: Lectures 1 to 21 In - class exam: 11:45 - 12:35, March 27, in the classroom bring calculator, open book, open notes Flash Memory: NAND, NOR, etc. m F SiO / 10 854 8 9 3 12 0 2 EEL4930/5934 In - Class Assignment 1 6 SRAM EEL4930/5934 In - Class Assignment 2 10 PD1 and PD2 DRAM Problem: If the storage capacitor is 3 times that of the bitline parasitic capacitance. What is the bitline voltage V BL we need to apply in order to have 0.4 V signal change in the bitline during the READ operation. What is the bitline voltage V BL we need to have the same signal change in the bitline during the READ operation if we double the spacing between the two plates of the storage capacitor. If double the spacing